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IRF1503 Datasheet, PDF (1/9 Pages) International Rectifier – AUTOMOTIVE MOSFET | |||
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PD-94526A
AUTOMOTIVE MOSFET
IRF1503
Typical Applications
â 14V Automotive Electrical Systems
â 14V Electronic Power Steering
Features
â Advanced Process Technology
â Ultra Low On-Resistance
G
â 175°C Operating Temperature
â Fast Switching
â Repetitive Avalanche Allowed up to Tjmax
HEXFET® Power MOSFET
D
VDSS = 30V
RDS(on) = 3.3mâ¦
ID = 75A
S
Description
Specifically designed for Automotive applications, this
design of HEXFET® Power MOSFETs utilizes the lastest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of this
HEXFET power MOSFET are a 175°C junction operating
temperature, fast switching speed and improved repetitive
avalanche rating. These combine to make this design an
extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
EAS
EAS (tested)
IAR
EAR
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V (Silicon limited)
Continuous Drain Current, VGS @ 10V (See Fig.9)
Continuous Drain Current, VGS @ 10V (Package limited)
Pulsed Drain Current Â
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche EnergyÂ
Single Pulse Avalanche Energy Tested ValueÂ
Avalanche CurrentÂ
Repetitive Avalanche EnergyÂ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
TO-220AB
Max.
240
170
75
960
330
2.2
± 20
510
980
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
°C
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
www.irf.com
Typ.
âââ
0.50
âââ
Max.
0.45
âââ
62
Units
°C/W
1
12/11/02
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