IRF1407 Datasheet, PDF (1/9 Pages) International Rectifier – Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A⑥)

PD - 93907
AUTOMOTIVE MOSFET
IRF1407
Typical Applications
q Integrated Starter Alternator
q 42 Volts Automotive Electrical Systems
Benefits
q Advanced Process Technology
q Ultra Low On-Resistance
G
q Dynamic dv/dt Rating
q 175°C Operating Temperature
q Fast Switching
q Repetitive Avalanche Allowed up to Tjmax
HEXFET^® Power MOSFET
D
V_DSS = 75V
R_DS(on) = 0.0078Ω
I_D = 130AV
S
Description
Specifically designed for Automotive applications, this Stripe Planar
design of HEXFET^® Power MOSFETs utilizes the lastest processing
techniques to achieve extremely low on-resistance per silicon area.
Additional features of this HEXFET power MOSFET are a 175°C junction
operating temperature, fast switching speed and improved repetitive
avalanche rating. These benefits combine to make this design an extremely
efficient and reliable device for use in Automotive applications and a wide
variety of other applications.
TO-220AB
Absolute Maximum Ratings
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
V_GS
E_AS
I_AR
E_AR
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current Q
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche EnergyR
Avalanche CurrentQ
Repetitive Avalanche EnergyW
Peak Diode Recovery dv/dt S
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
R_θJC
R_θCS
R_θJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
www.irf.com
Max.
130V
92V
520
330
2.2
± 20
390
See Fig.12a, 12b, 15, 16
4.6
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.50
–––
Max.
0.45
–––
62
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
10/11/01