IRF1324STRL-7PP Datasheet, PDF (1/10 Pages) International Rectifier – High Efficiency Synchronous Rectification in SMPS

Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
IRF1324S-7PPbF
HEXFET^® Power MOSFET
D
V_DSS
R_DS(on) typ.
24V
0.8mΩ
G
max.
I_{D (Silicon Limited)}
c ^1.0mΩ
429A
S
I_{D (Package Limited)}
240A
D
G
Gate
S
SS
S
S
G
D²Pak 7 Pin
D
Drain
S
Source
Base part number
IRF1324S-7PPbF
Package Type
D²Pak-7Pin
Standard Pack
Form
Tube
Tape and Reel Left
Quantity
50
800
Orderable Part Number
IRF1324S-7PPbF
IRF1324STRL-7PP
Absolute Maximum Ratings
Symbol
Parameter
I_D @ T_C = 25°C
I_D @ T_C = 100°C
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
I_D @ T_C = 25°C
I_DM
d ^{Continuous Drain Current, VGS @ 10V (Package Limited)}
Pulsed Drain Current
P_D @T_C = 25°C _{Maximum Power Dissipation}
Linear Derating Factor
V_GS
dv/dt
Gate-to-Source Voltage
f Peak Diode Recovery
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Avalanche Characteristics
e E_{AS (Thermally limited)} Single Pulse Avalanche Energy
Ù I_AR
Avalanche Current
g E_AR
Repetitive Avalanche Energy
Thermal Resistance
Symbol
R_θJC
R_θJA
Parameter
k Junction-to-Case
j Junction-to-Ambient (PCB Mount) , D²Pak
Max.
™ 429
™ 303
240
1640
300
2.0
± 20
1.6
-55 to + 175
300 (1.6mm from case)
230
See Fig. 14, 15, 22a, 22b,
Typ.
–––
–––
Max.
0.50
40
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1
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April 08, 2014