IRF1302S Datasheet, PDF (1/11 Pages) International Rectifier – Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A⑥)

PD - 94520
AUTOMOTIVE MOSFET
IRF1302S
Benefits
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
G
IRF1302L
HEXFET^® Power MOSFET
D
V_DSS = 20V
R_DS(on) = 4.0mΩ
I_D = 174A†
S
Description
Specifically designed for Automotive applications, this Stripe Planar
design of HEXFET^® Power MOSFET utilizes the lastest processing
techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating
temperature, fast switching speed and improved repetitive avalanche
rating. These benefits combine to make this design an extremely efficient
and reliable device for use in Automotive applications and a wide variety
of other applications.
D²Pak
IRF1302S
TO-262
IRF1302L
Absolute Maximum Ratings
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
V_GS
E_AS
I_AR
E_AR
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy‡
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
174†
120†
700
200
1.4
± 20
350
See Fig.12a, 12b, 15, 16
TBD
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
R_θJC
R_θJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB mount)ˆ
Typ.
–––
–––
Max.
0.74
40
Units
°C/W
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1
07/16/02