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IRF1302PBF Datasheet, PDF (1/10 Pages) International Rectifier – AUTOMOTIVE MOSFET ( VDSS = 20V , RDS(on) = 4.0mΩ , ID = 180A ) | |||
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PD - 95499
AUTOMOTIVE MOSFET
IRF1302PbF
Benefits
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
G
l Lead-Free
HEXFET® Power MOSFET
D
VDSS = 20V
RDS(on) = 4.0mâ¦
ID = 180AÂ
S
Description
Specifically designed for Automotive applications, this Stripe Planar
design of HEXFET® Power MOSFET utilizes the lastest processing
techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating
temperature, fast switching speed and improved repetitive avalanche
rating. These benefits combine to make this design an extremely efficient
and reliable device for use in Automotive applications and a wide variety
of other applications.
TO-220AB
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current Â
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche EnergyÂ
Avalanche CurrentÂ
Repetitive Avalanche EnergyÂ
Peak Diode Recovery dv/dt Â
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
180Â
130Â
700
230
1.5
± 20
350
See Fig.12a, 12b, 15, 16
TBD
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient (PCB mount)Â
www.irf.com
Typ.
âââ
0.50
âââ
Max.
0.65
âââ
62
Units
°C/W
1
06/29/04
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