IRF1018EPBF_15 Datasheet, PDF (1/11 Pages) International Rectifier – High Efficiency Synchronous Rectification in SMPS

Applications
l High Efficiency Synchronous Rectification in
SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
Benefits
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche SOA
l Enhanced body diode dV/dt and dI/dt
Capability
PD - 97125
IRF1018EPbF
IRF1018ESPbF
IRF1018ESLPbF
HEXFET^® Power MOSFET
D
V_DSS
60V
R_DS(on) typ.
7.1m:
G
max. 8.4m:
S
I_D
79A
D
DS
G
TO-220AB
IRF1018EPbF
G
Gate
D
D
DS
G
D²Pak
IRF1018ESPbF
DS
G
TO-262
IRF1018ESLPbF
D
Drain
S
Source
Absolute Maximum Ratings
Symbol
Parameter
I_D @ T_C = 25°C Continuous Drain Current, V_GS @ 10V
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current c
Maximum Power Dissipation
Linear Derating Factor
V_GS
Gate-to-Source Voltage
dv/dt
Peak Diode Recovery e
T_J
T_STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw k
Avalanche Characteristics
E_{AS (Thermally limited)}
I_AR
Single Pulse Avalanche Energy d
Avalanche Current c
E_AR
Repetitive Avalanche Energy f
Thermal Resistance
Symbol
Parameter
R_θJC
R_θCS
R_θJA
R_θJA
Junction-to-Case j
Case-to-Sink, Flat Greased Surface , TO-220
Junction-to-Ambient, TO-220 j
Junction-to-Ambient (PCB Mount) , D²Pak ij
www.irf.com
Max.
79
56
315
110
0.76
± 20
21
-55 to + 175
300
10lbxin (1.1Nxm)
88
47
11
Typ.
–––
0.50
–––
–––
Max.
1.32
–––
62
40
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1
2/28/08