IRF054 Datasheet, PDF (1/7 Pages) International Rectifier – REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)

PD - 90640
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET^TRANSISTORS
THRU-HOLE (TO-204AA/AE)
IRF054
60V, N-CHANNEL
Product Summary
Part Number BVDSS RDS(on)
IRF054
60V 0.022Ω
ID
45A*
The HEXFET^technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resis-
tance combined with high transconductance; superior re-
verse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control,
very fast switching, ease of paralleling and temperature
stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
TO-3
Features:
n Repetitive Avalanche Ratings
n Dynamic dv/dt Rating
n Hermetically Sealed
n Simple Drive Requirements
n Ease of Paralleling
Absolute Maximum Ratings
ID @ VGS = 0V, TC = 25°C
ID @ VGS =0V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
* Current limited by pin diameter.
For footnotes refer to the last page
www.irf.com
Units
45*
31
A
220
150
W
1.2
W/°C
±20
V
480
mJ
-
A
-
mJ
4.5
V/ns
-55 to 150
o_C
300 (0.063 in. (1.6mm) from case for 10s)
11.5(typical)
g
1
01/24/01