IRCZ34 Datasheet, PDF (1/6 Pages) International Rectifier – Power MOSFET(Vdss=60V, Rds(on)=0.050ohm, Id=30A)

PD - 9.590A
IRCZ34
HEXFET^® Power MOSFET
l Dynamic dv/dt Rating
l Current Sense
l 175°C Operating Temperature
l Fast Switching
l Ease of Paralleling
l Simple Drive Requirements
Description
Third Generation HEXFETs from International Rectifier provide the designer with
the best combination of fast switching, ruggedized device, low on-resistance and
cost-effectiveness.
The HEXSence device provides an accurate fraction of the drain current through
the additional two leads to be used for control or protection of the device. These
devices exhibit similar electrical and thermal characteristics as their IRF-series
equivalent part numbers. The provision of a kelvin source connection effectively
eliminates problems of common source inductance when the HEXSence is
used as a fast, high-current switch in non current-sensing applications.
V_DSS = 60V
R_DS(on) = 0.050Ω
I_D = 30A
TO-220 HexSense
Absolute Maximum Ratings
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
V_GS
E_AS
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ‚
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or screw
Max.
30
21
120
88
0.59
±20
15
4.5
-55 to + 175
300 (1.6mm from case)
10 lbf•in (1.1 N•m)
Units
A
W
W/°C
V
mJ
A
°C
Thermal Resistance
Parameter
Min.
Max.
Units
R_θJC
R_θCS
R_θJA
Junction-to-Case
—
—
1.7
Case-to-Sink, Flat, Greased Surface
—
0.50
—
°C/W
Junction-to-Ambient
—
—
62
** When mounted on FR-4 board using minimum recommended footprint. For recommended footprint and soldering techniques refer to application note #AN-994.
C-7