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IRAM136-3023B Datasheet, PDF (1/16 Pages) International Rectifier – Integrated Power Hybrid IC for Low Voltage Motor Applications
PD-97270 RevA
IRAM136-3023B
Series
Integrated Power Hybrid IC for
Low Voltage Motor Applications
30A, 150V
with Internal Shunt Resistor
Description
International Rectifier's IRAM136-3023B is a 30A, 150V Integrated Power Hybrid IC with Internal Shunt
Resistor for low voltage Motor Drives applications such as electric vehicles, portable power tools and light
industrial applications. IR's technology offers an extremely compact, high performance AC motor-driver in a
single isolated package to simplify design.
This advanced HIC is a combination of IR's low RDS(on) Advance Planar MOSFET Super Rugged technology
and the industry benchmark 3-Phase high voltage, high speed driver in a fully isolated thermally enhanced
package. A built-in temperature monitor and over-current and over-temperature protections and integrated
under-voltage lockout function, deliver high level of protection and fail-safe operation. Using a new
developed single in line package (SiP3) with heat spreader for the power die along with full transfer mold
structure minimizes PCB space and resolves isolation problems to heatsink.
Features
• Integrated Gate Drivers
• Temperature Monitor and Protection
• Overcurrent shutdown
• Low RDS(on) Advance Planar Super Rugged Technology
• Undervoltage lockout for all channels
• Matched propagation delay for all channels
• 5V Schmitt-triggered input logic
• Cross-conduction prevention logic
• Lower di/dt gate driver for better noise immunity
• Motor Power up to 4.0kW / 48~100 Vdc
• Fully Isolated Package, Isolation 2000VRMS min
Absolute Maximum Ratings
Parameter
Description
Value
Units
VBR(DSS)
V+
MOSFET Blocking Voltage
Positive Bus Input Voltage
150
V
100
IO @ TC=25°C
RMS Phase Current (Note 1)
30
IO @ TC=100°C
RMS Phase Current (Note 1)
15
A
IO
Pulsed RMS Phase Current (Note 1 and 2)
56
FPWM
PWM Carrier Frequency
20
kHz
PD
Power Dissipation per MOSFET @ TC =25°C
89
W
VISO
Isolation Voltage (1min)
2000
VRMS
TJ (MOSFET & IC)
Maximum Operating Junction Temperature
+150
TC
Operating Case Temperature Range
-20 to +100
°C
TSTG
Storage Temperature Range
-40 to +125
T
Mounting Torque (M4 screw)
0.7 to 1.17
Nm
Note 1: Sinusoidal modulation at V+=100V, TJ=150°C, FPWM=20kHz, modulation depth=0.8, pf=0.6, see Figure 3
Note 2: tP<100ms; TC=25°C; FPWM=20kHz, limited by IBUS-TRIP, see Table "Inverter Section Electrical Characteristics"
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