IR6311G Datasheet, PDF (1/4 Pages) International Rectifier – INTELLIGENT HIGH SIDE MOSFET POWER SWITCH

Data Sheet 6.124-G
IR6311G
INTELLIGENT HIGH SIDE MOSFET POWER SWITCH
Features
• PWM Current Limit for Short Circuit Protection
• Over-Temperature Protection
• Active Output Negative Clamp
• Reverse Battery Protection for Logic Circuit
• Broken Ground Protection
• Short to VCC Protection
• Low Noise Charge Pump
• Sleep Mode Supply Current
• 4kV ESD Protection On All Pins
• Logic Ground Isolated From Power Ground
General Description
The IR6311G is a monolithic HIGH SIDE SWITCH with built
in short circuit, over- temperature, ESD, inductive load turn
off capability and diagnostic feedback.
The on-chip protection circuit goes into PWM mode, limiting
the average current during short circuit if the drain current
exceeds 5A. The protection circuit latches off the high side
switch if the junction temperature exceeds 170^oC and latches
on after the junction temperature falls by 10^oC. The Vcc
(drain) to OUT (source) voltage is actively clamped at 55V,
improving its performance during turn off with inductive loads.
The on-chip charge pump high side driver stage is floating
and referenced to the source of the power MOSFET. Thus
the logic to power ground isolation can be as high as 50V.
This allows operation with larger offset as well as controlling
the switch during load energy recirculation or regeneration.
A diagnostic pin is provided for status feedback of short
circuit, over temperature and open load detection.
V_cc(op)
R_ds(on)
I_lim
T_j(sd)
E_av
5v-50v
150mΩ
5A
170^oC
100mJ
Applications
• Solenoid Driver
• Programmable Logic Controller
Truth Table
Condition
In Out
Dg
Normal
HH
H
Normal
L
L
L
Output Open
HH
H
Output Open
L
H
H
Shorted Output H Current-Limiting L
PWM Mode
Shorted Output L
L
L
Over-Temperature H
L
L
Over-Temperature L
L
L
Block Diagram
Available Packages
Vcc
SO8 Package
GND
OUT