IR51H737 Datasheet, PDF (1/6 Pages) International Rectifier – SELF-OSCILLATING HALF-BRIDGE

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Data Sheet No. PD-6.057D
IR51H737
SELF-OSCILLATING HALF-BRIDGE
Features
n Output Power MOSFETs in half-bridge configuration
300V Rated Breakdown Voltage
n High side gate drive designed for bootstrap operation
n Accurate timing control for both Power MOSFETs
Matched delay to get 50% duty cycle
n Matched deadtime of 1.2us
Internal oscillator with programmable frequency
f=
1
1. 4 × (RT + 75Ω) × CT
n Zener clamped Vcc for offline operation
n Half-bridge output is out of phase with RT
Product Summary
V_IN (max)
Duty Cycle
Deadtime
R_DS(on)
P_D (T_A = 25 ºC)
Description
Package
The IR51H737 is a high voltage, high speed, self-
oscillating half-bridge. Proprietary HVIC and latch
immune CMOS technologies, along with the
HEXFET^® power MOSFET technology, enable
ruggedized single package construction. The front-end
features a programmable oscillator which functions
similar to the CMOS 555 timer. The supply to the
control circuit has a zener clamp to simplify offline
operation. The output features two HEXFETs in a
half-bridge configuration with an internally set
deadtime designed for minimum cross-conduction in
the half-bridge. Propagation delays for the high and
low side power MOSFETs are matched to simplify use
in 50% duty cycle applications. The device can
operate up to 300 volts.
IR51H737
9506
300V
50%
1.2µs
0.75Ω
2.0W
Typical Connection
U P TO 300V D C BUS
V IN
IR 5 1 H 7 3 7
1
V
CC
6
V
B
COM
RT
CT
2
R
T
9
V _IN
3
C
T
7
VO
4
COM
TO LO AD
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