IR51H224 Datasheet, PDF (1/7 Pages) International Rectifier – SELF-OSCILLATING HALF BRIDGE

Preliminary Data Sheet No. PD60083I
IR51H(D)224
IR51H(D)320
IR51H(D)420
SELF-OSCILLATING HALF BRIDGE
Features
• Output Power MOSFETs in half-bridge configuration
• High side gate drive designed for bootstrap operation
• Bootstrap diode integrated into package (HD type)
• Accurate timing control for both Power MOSFETs
Matched delay to get 50% duty cycle
Matched deadtime of 1.2us
• Internal oscillator with programmable frequency
f=
1
1. 4 × (RT + 75Ω) × CT
Product Summary
VIN (max) 250V (IR51H(D)224)
400V (IR51H(D)310)
500V (IR51H(D)420)
Duty Cycle
50%
Deadtime
1.2µs
Rds(on)
1.1W (IR51H(D)224)
3.0W (IR51H(D)310)
3.6W (IR51H(D)420)
• 15.6V Zener clamped Vcc for offline operation
• Half-bridge output is out of phase with RT
• Micropower startup
PD (TA = 25oC)
Package
2.0W
Description
The IR51H(D)XXX are complete high voltage, high speed, self-
oscillating half-bridge circuits. Proprietary HVIC and latch im-
mune CMOS technologies, along with the HEXFET^® power
MOSFET technology, enable ruggedized single package construc-
tion.The front-end features a programmable oscillator which func-
tions similar to the CMOS 555 timer. The supply to the control
circuit has a zener clamp to simplify offline operation. The output
features two HEXFETs in a half-bridge configuration with an in-
ternally set deadtime designed for minimum cross-conduction in
the half-bridge. Propagation delays for the high and low side
power MOSFETs are matched to simplify
use in 50% duty cycle applications. The
device can operate up to 500 volts.
Typical Connection
DC Bus
VIN
COM
D1
IR51H(D)XXX
1 _Vcc
V_B
6
2
R_T
9
V_IN
R_T
3 _CT
VO ⁷
C_T
4 _COM
External
Fast recovery diode D1 is
not required for HD type
TO,
LOAD