IR2301_15 Datasheet, PDF (1/18 Pages) International Rectifier – HIGH AND LOW SIDE DRIVER

Data Sheet No. PD60201 Rev.D
IR2301(S) & (PbF)
HIGH AND LOW SIDE DRIVER
Features
• Floating channel designed for bootstrap operation
Fully operational to +600V
Packages
Tolerant to negative transient voltage dV/dt immune
• Gate drive supply range from 5 to 20V
• Undervoltage lockout for both channels
• 3.3V, 5V and 15V input logic compatible
• Matched propagation delay for both channels
• Logic and power ground +/- 5V offset.
• Lower di/dt gate driver for better noise immunity
• Outputs in phase with inputs
• Also available LEAD-FREE (PbF)
8 Lead PDIP
IR2301
8 Lead SOIC
IR2301S
Description
2106/2301//2108//2109/2302/2304 Feature Comparison
The IR2301(S) are high voltage, high speed
power MOSFET and IGBT drivers with indepen-
dent high and low side referenced output
channels. Proprietary HVIC and latch immune
CMOS technologies enable ruggedized mono-
lithic construction. The logic input is compatible
with standard CMOS or LSTTL output, down to
3.3V logic. The output drivers feature a high
Part
Input
logic
2106/2301
21064
2108
21084
2109/2302
21094
HIN/LIN
HIN/LIN
IN/SD
Cross-
conduction
prevention
logic
no
yes
yes
Dead-Time
none
Internal 540ns
Programmable 0.54~5 µs
Internal 540ns
Programmable 0.54~5 µs
Ground Pins
COM
VSS/COM
COM
VSS/COM
COM
VSS/COM
pulse current buffer stage designed for minimum
2304
HIN/LIN
yes
Internal 100ns
COM
driver cross-conduction. The floating channel
can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to
600 volts.
Typical Connection
(Refer to Lead
Assignments for
V_CC
correct pin con-
figuration). This/
These
diagram(s)
HIN
show electrical
connections
LIN
only. Please re-
fer to our Appli-
cation Notes
and DesignTips
for proper circuit
board layout.
V_CC
V_B
HIN
HO
LIN
V_S
COM
LO
IR2301
up to 600V
TO
LOAD
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