IR2213 Datasheet, PDF (1/14 Pages) International Rectifier – HIGH AND LOW SIDE DRIVER

Preliminary Data Sheet No. PD60030 rev.O
IR2213(S) & (PbF)
HIGH AND LOW SIDE DRIVER
Features
• ^{Floating channel designed for bootstrap operation}
Fully operational to +1200V
Tolerant to negative transient voltage
dV/dt immune
• Gate drive supply range from 12 to 20V
• Undervoltage lockout for both channels
• 3.3V logic compatible
Separate logic supply range from 3.3V to 20V
Logic and power ground ±5V offset
• CMOS Schmitt-triggered inputs with pull-down
• Cycle by cycle edge-triggered shutdown logic
• Matched propagation delay for both channels
• Outputs in phase with inputs
• Also available LEAD-FREE (PbF)
Product Summary
V_OFFSET
1200V max.
I_O+/-
1.7A / 2A
V_OUT
12 - 20V
t_on/off (typ.) 280 & 225 ns
Delay Matching
30 ns
Packages
Description
The IR2213(S) is a high voltage, high speed power
MOSFET and IGBT driver with independent high and
low side referenced output channels. Proprietary
HVIC and latch immune CMOS technologies enable
16-Lead SOIC
ruggedized monolithic construction. Logic inputs are
compatible with standard CMOS or LSTTL outputs,
14-Lead PDIP
(wide body)
down to 3.3V logic. The output drivers feature a high
pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched
to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power
MOSFET or IGBT in the high side configuration which operates up to 1200 volts.
Typical Connection
up to 1200V
HO
V_DD
V_DD
V_B
HIN
HIN
V_S
SD
SD
LIN
LIN
V_CC
V_SS
V_SS
COM
V_CC
LO
(Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical
connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout.
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