IR2153Z_15 Datasheet, PDF (1/6 Pages) International Rectifier – SELF-OSCILLATING HALF-BRIDGE DRIVER

PD-91800
IR2153Z
Features
· Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
· Undervoltage lockout
· Programmable oscillator frequency
f=
1
1.4 × (R_T + 75Ω) × C_T
· Matched propagation delay for both channels
· Micropower supply startup current of 90 µA.
· Shutdown function turns off both channels
· Low side output in phase with RT
SELF-OSCILLATING HALF-BRIDGE DRIVER
Product Summary
VOFFSET
Duty Cycle
IO+/-
Vclamp
Deadtime (typ.)
600V max.
50%
200 mA / 400 mA
15.6V
1.2 µs
Description
The IR2153Z is a high voltage, high speed, self-oscillating
power MOSFET and IGBT driver with both high and low
side referenced output channels. Proprietary HVIC and
latch immune CMOS technologies enable ruggedized
monolithic construction. The front end features a program-
mable oscillator which is similar to the 555 timer. The
output drivers feature a high pulse current buffer stage and
an internal deadtime designed for minimum driver cross-
conduction. Propagation delays for the two channels are
matched to simplify use in 50% duty cycle applications.
The floating channel can be used to drive an N-channel
power MOSFET or IGBT in the high side configuration
that operates off a high voltage rail up to 600 volts.
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All
voltage parameters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissi-
pation ratings are measured under board mounted and still air conditions.
Symbol
V_B
V_S
V_HO
V_LO
V_RT
V_CT
I_CC
I_RT
dV_s/dt
P_D
Rth_JA
T_J
T_S
T_L
Parameter
High Side Floating Supply Voltage
High Side Floating Supply Offset Voltage
High Side Floating Output Voltage
Low Side Output Voltage
R_T Voltage
C_T Voltage
Supply Current (Note 1)
R_T Output Current
Allowable Offset Supply Voltage Transient
Package Power Dissipation @ T_A £ +25°C
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Lead Temperature (Soldering, 10 seconds)
Min.
-0.3
V_B - 25
V_S - 0.3
-0.3
-0.3
-0.3
—
-5
—
—
—
-55
-55
—
Max.
625
V_B + 0.3
V_B + 0.3
V_CC + 0.3
V_CC + 0.3
V_CC + 0.3
25
5
50
1.0
100
125
150
300
Units
V
mA
V/ns
W
°C/W
°C
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