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IR2113E6_15 Datasheet, PDF (1/14 Pages) International Rectifier – HIGH AND LOW SIDE DRIVER
PD-91882A
IR2113E6
HIGH AND LOW SIDE DRIVER
Features
n Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
n Gate drive supply range from 10 to 20V
n Undervoltage lockout for both channels
n Separate logic supply range from 5 to 20V
Logic and power ground ±5V offset
n CMOS Schmitt-triggered inputs with pull-down
n Cycle by cycle edge-triggered shutdown logic
n Matched propagation delay for both channels
n Outputs in phase with inputs
Product Summary
VOFFSET
600V max.
IO+/-
2A / 2A
VOUT
10 - 20V
ton/off (typ.) 120ns & 94ns
Delay Matching
20ns
Description
The IR2113E6 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low
side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized
monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs. The output
drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation
delays are matched to simplify use in high frequency applications. The floating channel can be used to drive
an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All
voltage parameters are absolute voltages referenced to COM. The Thermal Resistance and Power
Dissipation ratings are measured under board mounted and still air conditions.
Symbol
VB
VS
VHO
VCC
VLO
VDD
VSS
VIN
dVS/dt
PD
RthJA
Tj
TS
TL
Parameter
High Side Floating Supply Absolute Voltage
High Side Floating Supply Offset Voltage
High Side Output Voltage
Low Side Fixed Supply Voltage
Low Side Output Voltage
Logic Supply Voltage
Logic Supply Offset Voltage
Logic Input Voltage (HIN, LIN & SD)
Allowable Offset Supply Voltage Transient (Fig. 16)
Package Power Dissipation @ TA ≤ = 25°C (Fig. 19)
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Package Mounting Surface Temperature
Weight
www.irf.com
Min.
Max.
-0.5
VS + 20
—
600
VS -0.5
-0.5
VB + 0.5
20
-0.5
-0.5
VCC - 20
VSS - 0.5
—
VCC + 0.5
VSS + 20
VCC + 0.5
VDD + 0.5
50
—
1.6
—
125
-55
125
-55
150
300 (for 5 seconds)
0.45 (typical)
Units
V
V/ns
W
°C/W
°C
g
1
05/02/11