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IR21094SPBF Datasheet, PDF (1/25 Pages) International Rectifier – Gate drive supply range from 10 to 20V
Data Sheet No. PD60163-U
IR2109(4) (S) & (PbF)
Features
• Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
• Gate drive supply range from 10 to 20V
• Undervoltage lockout for both channels
• 3.3V, 5V and 15V input logic compatible
• Cross-conduction prevention logic
• Matched propagation delay for both channels
• High side output in phase with IN input
• Logic and power ground +/- 5V offset.
• Internal 540ns dead-time, and programmable
up to 5us with one external RDT resistor (IR21094)
• Lower di/dt gate driver for better noise immunity
• Shut down input turns off both channels.
• Available in Lead-Free
HALF-BRIDGE DRIVER
Product Summary
VOFFSET
600V max.
IO+/-
120 mA / 250 mA
VOUT
10 - 20V
ton/off (typ.)
750 & 200 ns
Dead Time
540 ns
(programmable up to 5uS for IR21094)
Packages
Description
The IR2109(4)(S) are high voltage, high speed power
MOSFET and IGBT drivers with dependent high and
low side referenced output channels. Proprietary HVIC
and latch immune CMOS technologies enable rugge-
dized monolithic construction. The logic input is
compatible with standard CMOS or LSTTL output,
down to 3.3V logic. The output drivers feature a high
8 Lead SOIC
14 Lead SOIC
14 Lead PDIP
8 Lead PDIP
pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to
drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.
Typical Connection
VCC
VCC
VB
IN
IN
HO
SD
SD
VS
COM
LO
IR2109
(Refer to Lead Assignments for correct
configuration). This/These diagram(s) show
electrical connections only. Please refer to our
Application Notes and DesignTips for proper
circuit board layout.
up to 600V
TO
LOAD
HO
VCC
VCC
VB
IN
IN
VS
SD
SD
DT
VSS
VSS
COM
RDT
LO
IR21094
up to 600V
TO
LOAD
www.irf.com
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