IR2106 Datasheet, PDF (1/22 Pages) International Rectifier – HIGH AND LOW SIDE DRIVER

Data Sheet No. PD60162 Rev. V
IR2106(4)^(S)
HIGH AND LOW SIDE DRIVER
Features
• Floating channel designed for bootstrap operation
Fully operational to +600V
Packages
Tolerant to negative transient voltage
dV/dt immune
• Gate drive supply range from 10 to 20V (IR2106(4))
• Undervoltage lockout for both channels
• 3.3V, 5V and 15V input logic compatible
• Matched propagation delay for both channels
• Logic and power ground +/- 5V offset.
• Lower di/dt gate driver for better noise immunity
• Outputs in phase with inputs (IR2106)
8-Lead SOIC
8-Lead PDIP
14-Lead SOIC
14-Lead PDIP
Description
The IR2106(4)(S) are high voltage,
high speed power MOSFET and
IGBT drivers with independent high
2106/2301//2108//2109/2302/2304Feature Comparison
Cross-
Part
Input
logic
conduction
prevention
Dead-Time
Ground Pins
Ton/Toff
and low side referenced output chan-
nels. Proprietary HVIC and latch
immune CMOS technologies enable
ruggedized monolithic construction.
2106/2301
21064
2108
21084
HIN/LIN
HIN/LIN
logic
no
yes
none
Internal 540ns
Programmable 0.54~5µs
COM
VSS/COM
COM
VSS/COM
220/200
220/200
The logic input is compatible with
standard CMOS or LSTTL output,
down to 3.3V logic. The output driv-
2109/2302
21094
2304
IN/SD
HIN/LIN
yes
Internal 540ns
COM
Programmable 0.54~5µs VSS/COM
yes
Internal 100ns
COM
750/200
160/140
ers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating
channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which
operates up to 600 volts.
Typical Connection
V_CC
V_CC
V_B
HIN
HIN
HO
LIN
LIN
V_S
COM
LO
IR2106
up to 600V
TO
LOAD
up to 600V
(Refer to Lead Assignments for cor-
rect pin configuration). This/These
diagram(s) show electrical connec-
tions only. Please refer to our Appli-
cation Notes and DesignTips for
proper circuit board layout.
HO
V_CC
V_CC
V_B
HIN
HIN
V_S
LIN
LIN
V_SS
V_SS
COM
LO
IR21064
TO
LOAD
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