IR2105 Datasheet, PDF (1/12 Pages) International Rectifier – High Voltage, High Speed Power MOSFET and IGBT Driver

Data Sheet No. PD60139J
IR2105
Features
• Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
• Gate drive supply range from 10 to 20V
• Undervoltage lockout
• 5V Schmitt-triggered input logic
• Cross-conduction prevention logic
• Internally set deadtime
• High side output in phase with input
• Match propagation delay for both channels
Description
The IR2105 is a high voltage, high speed power
MOSFET and IGBT driver with dependent high and
low side referenced output channels. Proprietary
HVIC and latch immune CMOS technologies en-
able ruggedized monolithic construction. The logic
input is compatible with standard CMOS or LSTTL
outputs. The output drivers feature a high pulse
current buffer stage designed for minimum driver
cross-conduction. The floating channel can be used
to drive an N-channel power MOSFET or IGBT in
the high side configuration which operates from 10
to 600 volts.
Typical Connection
HALF BRIDGE DRIVER
Product Summary
V_OFFSET
600V max.
I_O+/-
130 mA / 270 mA
V_OUT
10 - 20V
t_on/off (typ.)
680 & 150 ns
Deadtime (typ.)
520 ns
Packages
8 Lead PDIP
8 Lead SOIC
up to 600V
V_CC
V_CC
V_B
IN
IN
HO
COM
V_S
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