IR20153S Datasheet, PDF (1/15 Pages) International Rectifier – HIGH SIDE DRIVER WITH RECHARGE

Preliminary Data Sheet PD60214 Rev B
IR20153S & (PbF)
HIGH SIDE DRIVER WITH RECHARGE
Features
Product Summary
• Floating channel designed for bootstrap operation
Fully operational up to 150V
V_OFFSET
150V max.
Tolerant to negative transient voltage, dV/dt immune
• Gate drive supply range from 5V to 20V
• Undervoltage lockout
• Internal recharge FET for bootstrap refresh
• Internal deadtime of 11µs and 0.8µs
• CMOS Schmitt-triggered input logic
• Output out of phase with input
• Reset input
• Split pull-up and pull-down gate drive pins
• Also available LEAD-FREE (PbF)
I_O+/-
V_OUT
t_on/off
400mA @ VBS=7V,
1.5A @ VBS=16V
5-20V
1.0 and 0.3 µs
Description
Package
The IR20153S is a high voltage, high speed power MOSFET driver . Proprietary HVIC
and latch immune CMOS technologies enable ruggedized monolithic construction. The
logic input is compatible with standard CMOS output down to 3.3V. The output driver
features a high pulse current buffer stage designed for minimum cross-conduction. The
floating channel can be used to drive an N-channel power MOSFET in the high or low
side configuration which operates up to 150 volts.
8-Lead SOIC
Typical Connection
up to 150V
VCC
IN
RESET
(Refer to Lead Assignments
for correct configuration).
This/These diagram(s) show
electrical connections only.
Please refer to our Applica-
tion Notes and DesignTips
for proper circuit board lay-
out.
www.irf.com
VCC
IN
GND
RESET
VB
HOH
HOL
VS
Load
1