IR04H420 Datasheet, PDF (1/6 Pages) International Rectifier – HIGH VOLTAGE HALF-BRIDGE

Data Sheet No. PD-6.078
IR04H420
Features
n Output Power MOSFETs in half-bridge configuration
n 500V Rated Breakdown Voltage
n High side gate drive designed for bootstrap operation
n Matched propagation delay for both channels
n Independent high and low side output channels
n Undervoltage lockout
n 5V Schmitt-triggered input logic
n Half-Bridge output in phase with IN
n Cross conduction prevention logic
n Internally set dead time
n Shut down input turns off both channels
HIGH VOLTAGE HALF-BRIDGE
Product Summary
V_IN (max)
500V
t_on/off
130 ns
t_rr
270 ns
R_DS(on)
3.0Ω
P_D (T_A = 25 ºC) 2.0W
Description
The IR04H420 is a high voltage, high speed half
bridge. Proprietary HVIC and latch immune CMOS
technologies, along with the HEXFET^® power
MOSFET technology, enable ruggedized single
package construction. The logic inputs are compatible
with standard CMOS or LSTTL outputs. The front end
features an independent high and low side driver in
phase with the logic compatible input signals. The
output features two HEXFETs in a half-bridge
configuration with a high pulse current buffer stage
designed for minimum cross-conduction in the half-
bridge. Propagation delays for the high and low side
power MOSFETs are matched to simplify use. The
device can operate up to 500 volts.
Package
IR04H420
9506
Typical Connection
U P TO 500V D C BUS
V IN
V
CC
IN
SD
COM
IR 0 4 H 4 2 0
1
V
CC
6
V
B
2
IN
9
V _IN
3
SD
7
VO
4
COM
TO LO AD