IR02H420 Datasheet, PDF (1/6 Pages) International Rectifier – HIGH VOLTAGE HALF-BRIDGE

Data Sheet No. PD-6.076
IR02H420
Features
HIGH VOLTAGE HALF-BRIDGE
Product Summary
n Output Power MOSFETs in half-bridge configuration
n 500V Rated Breakdown Voltage
n High side gate drive designed for bootstrap operation
n Matched propagation delay for both channels
n Independent high and low side output channels
n Undervoltage lockout
n 5V Schmitt-triggered input logic
n Half-Bridge output out of phase with HIN
Description
The IR02H420 is a high voltage, high speed half
bridge. Proprietary HVIC and latch immune CMOS
technologies, along with the HEXFET^® power
MOSFET technology, enable ruggedized single
package construction. The logic inputs are compatible
with standard CMOS or LSTTL outputs. The front end
features an independent high and low side driver in
phase with the logic compatible input signals. The
output features two HEXFETs in a half-bridge
configuration with a high pulse current buffer stage
designed for minimum cross-conduction in the half-
bridge. Propagation delays for the high and low side
power MOSFETs are matched to simplify use. The
device can operate up to 500 volts.
V_IN (max)
t_on/off
t_rr
R_DS(on)
P_D (T_A = 25 ºC)
Package
IR02H420
9506
500V
130 ns
270 ns
3.0Ω
2.0W
Typical Connection
UP TO 500V DC BUS
V IN
V
CC
H _IN
L _IN
COM
IR 0 2 H 4 2 0
1
V
CC
6
V
B
2
H _IN
9
V _IN
3
L _IN
7
VO
4
COM
TO LOAD