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| IR01HD214 Datasheet, PDF (1/7 Pages) International Rectifier – HIGH VOLTAGE HALF BRIDGE | |||
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Data Sheet No. PD-6.075-G
IR01H(D)214 / IR01H(D)214-P2
IR01H(D)224 / IR01H(D)224-P2
IR01H(D)420 / IR01H(D)420-P2
HIGH VOLTAGE HALF BRIDGE
Features
⢠Output Power MOSFETs in half-bridge configuration
⢠500V rated breakdown voltage
⢠High side gate drive designed for bootstrap
operation
⢠Matched propagation delay for both channels
⢠Undervoltage lockout
⢠5V Schmitt-triggered input logic
⢠Half-Bridge output in phase with HIN
⢠Heatsink version (P2) with improved PD
Description
The IR01H(D)xxx is a high voltage, high speed half
bridge. Proprietary HVIC and latch immune CMOS
technologies, along with the HEXFET power
MOSFET technology, enable ruggedized single
package construction. The logic inputs are compat-
ible with standard CMOS or LSTTL outputs. The
front end features an independent high and low side
driver in phase with the logic compatible input
signals. The output features two HEXFETs in a half-
bridge configuration with a high pulse current buffer
stage designed for minimum cross-conduction in the
half bridge. Propagation delays for the high and low
side power MOSFETs are matched to simplify use.
Product Summary
VIN (max)
250V- 214/224
500V - 420
ton/off
trr
RDS(on)
130 & 90 ns
260 ns
2.0⦠- H214
1.1⦠- H224
3.0⦠- H420
PD(TA = 25oC)
2.0W
4.0W - P2
Packages
Typical Connection
VIN
Vcc
HIN
L IN
COM
HV DC Bus
D1
1 Vcc VB 6
2 HIN
VIN 9
3 L IN
VO 7
COM
4
NOTE: D1 is not required for
the HD type
TO
LOAD
1
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