IPS042GTR Datasheet, PDF (1/10 Pages) International Rectifier – DUAL FULLY PROTECTED POWER MOSFET SWITCH

Data Sheet No.PD 60153-J
IPS042G
DUAL FULLY PROTECTED POWER MOSFET SWITCH
Features
• Over temperature shutdown
• Over current shutdown
• Active clamp
• Low current & logic level input
• E.S.D protection
Description
The IPS042G is a fully protected dual low side SMART
POWER MOSFET that features over-current, over-tem-
perature, ESD protection and drain to source active
clamp.This device combines a HEXFET® POWER
MOSFET and a gate driver. It offers full protection
and high reliability required in harsh environments.
The driver allows short switching times and provides
efficient protection by turning OFF the power MOSFET
when the temperature exceeds 165^oC or when the
drain current reaches 2A. This device restarts once
the input is cycled. The avalanche capability is
significantly enhanced by the active clamp and cov-
ers most inductive load demagnetizations.
Product Summary
R_ds(on)
V _clamp
I_shutdown
T_on/Toff
500mΩ (max)
50V
2A
1.5µs
Package
8-Lead SOIC
Typical Connection
Load
R in series
D
(if needed)
IN
control _S
Q
S
Logic signal
(Refer to lead assignment for correct pin configuration)
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