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| IPS032G Datasheet, PDF (1/11 Pages) International Rectifier – SINGLE/DUAL FULLY PROTECTED POWER MOSFET SWITCH | |||
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Data Sheet No.PD 60151-J
IPS031G/IPS032G
SINGLE/DUAL FULLY PROTECTED POWER MOSFET SWITCH
Features
⢠Over temperature shutdown
⢠Over current shutdown
⢠Active clamp
⢠Low current & logic level input
⢠E.S.D protection
Description
The IPS031G/IPS032G are fully protected single/dual
low side SMART POWER MOSFETs that feature over-
current, over-temperature, ESD protection and drain
to source active clamp.These devices combine a
HEXFET® POWER MOSFET and a gate driver. They
offer full protection and high reliability required in
harsh environments. The driver allows short switch-
ing times and provides efficient protection by turning
off the power MOSFET when the temperature ex-
ceeds 165oC or when the drain current reaches 12A.
The device restarts once the input is cycled. The
avalanche capability is significantly enhanced by the
active clamp and covers most inductive load demag-
netizations.
Typical Connection
Product Summary
Rds(on)
70m⦠(max)
V clamp
50V
Ishutdown
12A
Ton/Toff
1.5µs
Packages
8-Lead SOIC
IPS031G
16-Lead SOIC
IPS032G
(Dual)
Load
R in series
D
(if needed)
IN
control S
Q
S
Logic signal
(Refer to lead assignment for correct pin assignment)
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