IPS022G Datasheet, PDF (1/10 Pages) International Rectifier – DUAL FULLY PROTECTED POWER MOSFET SWITCH

Data Sheet No.PD60203
IPS022G
DUAL FULLY PROTECTED POWER MOSFET SWITCH
Features
• Over temperature shutdown
• Over current shutdown
• Active clamp
• Low current & logic level input
• E.S.D protection
Description
The IPS022G are fully protected dual low side SMART
POWER MOSFETs respectively. They feature over-
current, over-temperature, ESD protection and drain
to source active clamp.These devices combine a
HEXFET® POWER MOSFET and a gate driver. They
offer full protection and high reliability required in
harsh environments. The driver allows short switch-
ing times and provides efficient protection by turning
OFF the power MOSFET when the temperature ex-
ceeds 165^oC or when the drain current reaches 5A.
These devices restart once the input is cycled. The
avalanche capability is significantly enhanced by
the active clamp and covers most inductive load
demagnetizations.
Product Summary
R_ds(on)
V _clamp
I_shutdown
T_on/Toff
150mΩ (max)
50V
5A
1.5µs
Package
8-Lead SOIC
IPS022G
(Dual)
Typical Connection
Load
R in series
D
(if needed)
IN
control _S
Q
S
Logic signal
(Refer to lead assignment for correct pin configuration)
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