IPS021L Datasheet, PDF (1/11 Pages) International Rectifier – FULLY PROTECTED POWER MOSFET SWITCH

Data Sheet No.PD60145-K
IPS021L
FULLY PROTECTED POWER MOSFET SWITCH
Features
• Over temperature shutdown
• Over current shutdown
• Active clamp
• Low current & logic level input
• E.S.D protection
Description
The IPS021L is a fully protected three terminal SMART
POWER MOSFET that features over-current, over-
temperature, ESD protection and drain to source
active clamp.This device combines a HEXFET®
POWER MOSFET and a gate driver. It offers full
protection and high reliability required in harsh envi-
ronments. The driver allows short switching times
and provides efficient protection by turning OFF the
power MOSFET when the temperature exceeds 165^oC
or when the drain current reaches 5A. The device
restarts once the input is cycled. The avalanche
capability is significantly enhanced by the active
clamp and covers most inductive load demagnetiza-
tions.
Typical Connection
Product Summary
R_ds(on)
V _clamp
I_shutdown
T_on/Toff
150mΩ (max)
50V
5A
1.5µs
Package
3 Lead SOT223
Load
R in series
D
(if needed)
IN
control _S
Q
S
Logic signal
(Refer to lead assignment for correct pin configuration)
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