IPS021 Datasheet, PDF (1/11 Pages) International Rectifier – FULLY PROTECTED POWER MOSFET SWITCH

Data Sheet No.PD 60148-K
IPS021⁽S⁾
FULLY PROTECTED POWER MOSFET SWITCH
Features
• Over temperature shutdown
• Over current shutdown
• Active clamp
• Low current & logic level input
• E.S.D protection
Description
The IPS021/IPS021S are fully protected three terminal
SMART POWER MOSFETs that feature over-current,
over-temperature, ESD protection and drain to source
active clamp.These devices combine a HEXFET®
POWER MOSFET and a gate driver. They offer full
protection and high reliability required in harsh envi-
ronments. The driver allows short switching times
and provides efficient protection by turning OFF the
power MOSFET when the temperature exceeds 165^oC
or when the drain current reaches 5A. These devices
restart once the input is cycled. The avalanche capa-
bility is significantly enhanced by the active clamp
and covers most inductive load demagnetizations.
Product Summary
R_ds(on)
V _clamp
I_shutdown
T_on/Toff
150mΩ (max)
50V
5A
1.5µs
Packages
3-Lead D²Pak
IPS021S
Typical Connection
3-Lead TO-220
IPS021
Load
R in series
D
(if needed)
IN
control _S
Q
S
Logic signal
(Refer to lead assignment for correct pin configuration)
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