HFA80NC40C Datasheet, PDF (1/5 Pages) International Rectifier – Ultrafast, Soft Recovery Diode

PD -2.473 rev. B 01/99
HEXFRED^TM
Features
• Reduced RFI and EMI
• Reduced Snubbing
• Extensive Characterization of
Recovery Parameters
HFA80NC40C
Ultrafast, Soft Recovery Diode
V_R = 400V
V_F(typ.)ƒ = 1V
I_F(AV) = 80A
Q_rr (typ.) = 200nC
I_RRM(typ.) = 6A
t_rr(typ.) = 30ns
di_(rec)M/dt (typ.)ƒ = 190A/µs
Description
HEXFRED^TM diodes are optimized to reduce losses and EMI/RFI in high frequency
power conditioning systems. An extensive characterization of the recovery
behavior for different values of current, temperature and di/dt simplifies the
calculations of losses in the operating conditions. The softness of the recovery
eliminates the need for a snubber in most applications. These devices are ideally
suited for power converters, motors drives and other applications where
switching losses are significant portion of the total losses.
Absolute Maximum Ratings (per Leg)
V_R
I_F @ T_C = 25°C
I_F @ T_C = 100°C
I_FSM
E_AS
P_D @ T_C = 25°C
P_D @ T_C = 100°C
T_J
T_STG
Parameter
Cathode-to-Anode Voltage
Continuous Forward Current
Continuous Forward Current
Single Pulse Forward Current 
Non-Repetitive Avalanche Energy ‚
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Max.
400
85
42
300
1.4
150
59
-55 to +150
D-61-8
Units
V
A
mJ
W
°C
Thermal - Mechanical Characteristics
Parameter
R_thJC
Junction-to-Case, Single Leg Conducting
Junction-to-Case, Both Legs Conducting
R_thCS
Wt
Case-to-Sink, Flat , Greased Surface
Weight
Mounting Torque
Min.
––––
––––
––––
––––
35 (4.0)
Typ.
––––
––––
0.30
7.8 (0.28)
––––
Max.
0.85
0.42
––––
––––
50 (5.7)
Units
°C/W
K/W
g (oz)
lbf•in
(N•m)
Note:  Limited by junction temperature
‚ L = 100µH, duty cycle limited by max T_J
ƒ 125°C
1