HFA70NC60CSL Datasheet, PDF (1/5 Pages) International Rectifier – Ultrafast, Soft Recovery Diode

PD -2.461 rev. B 01/99
HEXFRED^TM
Features
• Reduced RFI and EMI
• Reduced Snubbing
• Extensive Characterization of
Recovery Parameters
HFA70NC60CSL
Ultrafast, Soft Recovery Diode
V_R = 600V
V_F(typ.)ƒ = 1.2V
I_F(AV) = 70A
Q_rr (typ.) = 210nC
I_RRM(typ.) = 6A
t_rr(typ.) = 30ns
di_(rec)M/dt (typ.)ƒ = 180A/µs
Description
HEXFRED^TM diodes are optimized to reduce losses and EMI/RFI in high frequency
power conditioning systems. An extensive characterization of the recovery
behavior for different values of current, temperature and di/dt simplifies the
calculations of losses in the operating conditions. The softness of the recovery
eliminates the need for a snubber in most applications. These devices are ideally
suited for power converters, motors drives and other applications where
switching losses are significant portion of the total losses.
SLD-61-8
Absolute Maximum Ratings (per Leg)
V_R
I_F @ T_C = 25°C
I_F @ T_C = 100°C
I_FSM
E_AS
P_D @ T_C = 25°C
P_D @ T_C = 100°C
T_J
T_STG
Parameter
Cathode-to-Anode Voltage
Continuous Forward Current
Continuous Forward Current
Single Pulse Forward Current 
Non-Repetitive Avalanche Energy ‚
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Thermal - Mechanical Characteristics
R_thJC
Wt
Parameter
Junction-to-Case, Single Leg Conducting
Junction-to-Case, Both Legs Conducting
Weight
Note:  Limited by junction temperature
‚ L = 100µH, duty cycle limited by max T_J
ƒ 125°C
Max.
600
56
27
200
220
150
59
-55 to +150
300 (0.063 in. (1.6mm) from case)
Units
V
A
µJ
W
°C
Min.
––––
––––
––––
Typ.
––––
––––
4.3 (0.15)
Max.
0.85
0.42
––––
Units
°C/W
K/W
g (oz)
1