HFA35HB120 Datasheet, PDF (1/5 Pages) International Rectifier – Ultrafast, Soft Recovery Diode

HEXFRED^TM
PD-20370
HFA35HB120
Ultrafast, Soft Recovery Diode
Features
• Reduced RFI and EMI
• Reduced Snubbing
• Extensive Characterization of Recovery Parameters
• Hermetic
• Electrically Isolated
• Ceramic Eyelets
Description
HEXFRED^TM diodes are optimized to reduce losses and
EMI/RFI in high frequency power conditioning systems.
An extensive characterization of the recovery behavior
for different values of current, temperature and di/dt
simplifies the calculations of losses in the operating
conditions. The softness of the recovery eliminates the
need for a snubber in most applications. These devices
are ideally suited for power converters, motors drives and
other applications where switching losses are significant
portion of the total losses.
(ISOLATED BASE)
CATHODE
ANODE
V_R = 1200V
V_F = 3.1V
Q_rr = 510 nC
di_(rec)M/dt = 350A/µs
TO-254AA
Absolute Maximum Ratings (per Leg)
V_R
I_F @ T_C = 100°C
I_FSM @ T_C = 25°C
P_D @ T_C = 25°C
T_J
T_STG
Parameter
D.C. Reverse Voltage
Continuous Forward Current 
Single Pulse Forward Current ‚
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Max.
1200
11
190
83
-55 to +150
Units
V
A
W
°C
Thermal - Mechanical Characteristics
Parameter
R_θJC
Junction-to-Case, Single Leg Conducting
Weight
Note:  D.C. = 50% rect. wave
‚ 1/2 sine wave, 60 Hz , P.W. = 8.33 ms
www.irf.com
Typ.
—
9.3
Max.
1.5
—
Units
°C/W
g
1
6/30/99