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HFA30PB120 Datasheet, PDF (1/6 Pages) International Rectifier – ULTRAFAST, SOFT RECOVERY DIODE
HEXFREDTM
Features
• Ultrafast Recovery
• Ultrasoft Recovery
• Very Low IRRM
• Very Low Qrr
• Guaranteed Avalanche
• Specified at Operating Conditions
Benefits
• Reduced RFI and EMI
• Reduced Power Loss in Diode and
Switching Transistor
• Higher Frequency Operation
• Reduced Snubbing
• Reduced Parts Count
PD -2604A
HFA30PB120
Ultrafast, Soft Recovery Diode
VR = 1200V
VF(typ.)* = 2.3V
IF(AV) = 30A
Qrr (typ.)= 120nC
IRRM(typ.) = 4.7A
trr(typ.) = 47ns
di(rec)M/dt (typ.)* = 240A/µs
TO-247AC (Modified)
Description
International Rectifier's HFA16PB120 is a state of the art center tap ultra fast recovery diode. Employing
the latest in epitaxial construction and advanced processing techniques it features a superb combination
of characteristics which result in performance which is unsurpassed by any rectifier previously available.
With basic ratings of 1200 volts and 16 amps continuous current, the HFA16PB120 is especially well
suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time,
the HEXFRED product line features extremely low values of peak recovery current (IRRM) and does not
exhibit any tendency to "snap-off" during the tb portion of recovery. The HEXFRED features combine to
offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and
the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing,
component count and heatsink sizes. The HEXFRED HFA16PB120 is ideally suited for applications in
power supplies and power conversion systems (such as inverters), motor drives, and many other similar
applications where high speed, high efficiency is needed.
Absolute Maximum Ratings
Parameter
VR
Cathode-to-Anode Voltage
IF @ TC = 100°C Continuous Forward Current
IFSM
Single Pulse Forward Current
IFRM
Maximum Repetitive Forward Current
PD @TC = 25°C Maximum Power Dissipation
PD @TC = 100°C Maximum Power Dissipation
TJ
Operating Junction and
TSTG
Storage Temperature Range
* 125°C
www.irf.com
Max.
1200
30
120
90
350
140
-55 to + 150
Units
V
A
W
°C
1
07/27/04
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