HFA16TB120 Datasheet, PDF (1/6 Pages) International Rectifier – Ultrafast, Soft Recovery Diode

Bulletin PD -2.492 rev. A 11/00
HEXFRED^TM
Features
• Ultrafast Recovery
• Ultrasoft Recovery
• Very Low IRRM
• Very Low Qrr
• Specified at Operating Conditions
Benefits
• Reduced RFI and EMI
• Reduced Power Loss in Diode and Switching
Transistor
• Higher Frequency Operation
• Reduced Snubbing
• Reduced Parts Count
HFA16TB120
Ultrafast, Soft Recovery Diode
BASE
CATHODE
4
2
1
CATHODE
3
ANODE
2
V_R = 1200V
V_F(typ.)* = 2.3V
I_F(AV) = 16A
Q_rr (typ.)= 260nC
I_RRM(typ.) = 5.8A
t_rr(typ.) = 30ns
di_(rec)M/dt (typ.)* = 76A/µs
Description
International Rectifier's HFA16TB120 is a state of the art ultra fast recovery
diode. Employing the latest in epitaxial construction and advanced processing
techniques it features a superb combination of characteristics which result in
performance which is unsurpassed by any rectifier previously available. With
basic ratings of 1200 volts and 16 amps continuous current, the HFA16TB120
is especially well suited for use as the companion diode for IGBTs and
MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line
features extremely low values of peak recovery current (IRRM) and does not
exhibit any tendency to "snap-off" during the tb portion of recovery. The
HEXFRED features combine to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes. The HEXFRED HFA16TB120
is ideally suited for applications in power supplies and power conversion
systems (such as inverters), motor drives, and many other similar applications
where high speed, high efficiency is needed.
TO-220AC
Absolute Maximum Ratings
VR
IF @ TC = 100°C
IFSM
IFRM
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
* 125°C
Parameter
Cathode-to-Anode Voltage
Continuous Forward Current
Single Pulse Forward Current
Maximum Repetitive Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Max
1200
16
190
64
151
60
-55 to +150
Units
V
A
°C
W
1