HFA08PB120S Datasheet, PDF (1/6 Pages) International Rectifier – Ultrafast, Soft Recovery Diode

PD -2.365A
HFA08PB120
HEXFRED^TM
Ultrafast, Soft Recovery Diode
Features
• Ultrafast Recovery
• Ultrasoft Recovery
• Very Low I_RRM
• Very Low Q_rr
• Guaranteed Avalanche
• Specified at Operating Conditions
Benefits
• Reduced RFI and EMI
• Reduced Power Loss in Diode and Switching
Transistor
• Higher Frequency Operation
• Reduced Snubbing
• Reduced Parts Count
V_R = 1200V
V_F(typ.)* = 2.4V
I_F(AV) = 8.0A
Q_rr (typ.)= 140nC
I_RRM(typ.) = 4.5A
t_rr(typ.) = 28ns
di_(rec)M/dt (typ.)* = 85A/µs
Description
International Rectifier's HFA08PB120 is a state of the art center tap ultra fast
recovery diode. Employing the latest in epitaxial construction and advanced
processing techniques it features a superb combination of characteristics which
result in performance which is unsurpassed by any rectifier previously available.
With basic ratings of 1200 volts and 8 amps continuous current, the HFA08PB120
is especially well suited for use as the companion diode for IGBTs and
MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line
features extremely low values of peak recovery current (I_RRM) and does not
exhibit any tendency to "snap-off" during the tb portion of recovery. The
HEXFRED features combine to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode and the switching transistor.
These HEXFRED advantages can help to significantly reduce snubbing,
component count and heatsink sizes. The HEXFRED HFA08PB120 is ideally
suited for applications in power supplies and power conversion systems (such
as inverters), motor drives, and many other similar applications where high
speed, high efficiency is needed.
TO-247AC
(Modified)
Absolute Maximum Ratings
V_R
IF @ TC = 25°C
IF @ TC = 100°C
I_FSM
IFRM
I_AS
PD @ TC = 25°C
PD @ TC = 100°C
T_J
TSTG
Parameter
Cathode-to-Anode Voltage
Continuous Forward Current
Continuous Forward Current
Single Pulse Forward Current
Maximum Repetitive Forward Current
Maximum Single Pulse Avalanche Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Max.
1200
8.0
130
32
8.0
73.5
29
-55 to +150
Units
V
A
W
°C
* 125°C
5/12/97