HFA08PB120 Datasheet, PDF (1/7 Pages) International Rectifier – Ultrafast, Soft Recovery Diode

Bulletin PD -2.365 rev. B 11/00
HEXFRED^TM
HFA08PB120
Ultrafast, Soft Recovery Diode
Features
• UltrafastRecovery
• UltrasoftRecovery
• Very Low I_RRM
• Very Low Q_rr
• Specified at Operating Conditions
Benefits
• Reduced RFI and EMI
• Reduced Power Loss in Diode and Switching
Transistor
• HigherFrequencyOperation
• ReducedSnubbing
• Reduced Parts Count
BASE
CATHODE
4
2
1
CATHODE
3
ANODE
2
V_R = 1200V
V_F (typ.)* = 2.4V
I_{F (AV)} = 8.0A
Q_rr (typ.)= 140nC
I_RRM (typ.) = 4.5A
t_rr (typ.) = 28ns
di_{(rec) M} /dt (typ.)*= 85A /µs
Description
International Rectifier's HFA08PB120 is a state of the art ultra fast recovery diode.
Employing the latest in epitaxial construction and advanced processing techniques it
features a superb combination of characteristics which result in performance which is
unsurpassed by any rectifier previously available. With basic ratings of 1200 volts and 8
amps continuous current, the HFA08PB120 is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the
HEXFRED product line features extremely low values of peak recovery current (I_RRM) and
does not exhibit any tendency to "snap-off" during the t_b portion of recovery. The HEXFRED
features combine to offer designers a rectifier with lower noise and significantly lower
switching losses in both the diode and the switching transistor. These HEXFRED
advantages can help to significantly reduce snubbing, component count and heatsink
sizes. The HEXFRED HFA08PB120 is ideally suited for applications in power supplies and
power conversion systems (such as inverters), motor drives, and many other similar
applications where high speed, high efficiency is needed.
TO-247AC (Modified)
Absolute Maximum Ratings
V_R
I_F @ T_C = 100°C
I_FSM
I_FRM
P_D @ T_C = 25°C
P_D @ T_C = 100°C
T_J
T_STG
Parameter
Cathode-to-Anode Voltage
Continuous Forward Current
Single Pulse Forward Current
Maximum Repetitive Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
* 125°C
Max
1200
8.0
130
32
73.5
29
- 55 to 150
Units
V
A
W
°C
1