HFA06TB120 Datasheet, PDF (1/7 Pages) International Rectifier – Ultrafast, Soft Recovery Diode

Bulletin PD -2.382 rev. D 12/00
HEXFRED^TM
HFA06TB120
Ultrafast, Soft Recovery Diode
Features
• UltrafastRecovery
• UltrasoftRecovery
• Very Low I_RRM
• Very Low Q_rr
• Specified at Operating Conditions
Benefits
• Reduced RFI and EMI
• Reduced Power Loss in Diode and Switching
Transistor
• HigherFrequencyOperation
• ReducedSnubbing
• Reduced Parts Count
BASE
CATHODE
4
2
1
CATHODE
3
ANODE
2
V_R = 1200V
V_F(typ.)* = 2.4V
I_F(AV) = 6.0A
Q_rr (typ.)= 116nC
I_RRM(typ.) = 4.4A
t_rr(typ.) = 26ns
di_(rec)M/dt (typ.)* = 100A/µs
Description
International Rectifier's HFA06TB120 is a state of the art ultra fast recovery diode.
Employing the latest in epitaxial construction and advanced processing techniques it
features a superb combination of characteristics which result in performance which is
unsurpassed by any rectifier previously available. With basic ratings of 1200 volts and
6 amps continuous current, the HFA06TB120 is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the
HEXFRED product line features extremely low values of peak recovery current (I_RRM)
and does not exhibit any tendency to "snap-off" during the t_b portion of recovery. The
HEXFRED features combine to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode and the switching transistor.
These HEXFRED advantages can help to significantly reduce snubbing, component
count and heatsink sizes. The HEXFRED HFA06TB120 is ideally suited for applications
in power supplies and power conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high efficiency is needed.
TO-220AC
Absolute Maximum Ratings
VR
IF @ TC = 100°C
IFSM
IFRM
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Cathode-to-Anode Voltage
Continuous Forward Current
Single Pulse Forward Current
Maximum Repetitive Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
* 125°C
Max.
1200
8.0
80
24
62.5
25
-55 to +150
Units
V
A
W
°C
1