HF20A060ACE Datasheet, PDF (1/1 Pages) International Rectifier – Hexfred Die in Wafer Form

Hexfred Die in Wafer Form
Preliminary Data Sheet PD-20600 rev. C 2/04
HF20A060ACE
600 V
Size 20
6" Wafer
Electrical Characteristics ( Wafer Form )
Parameter
V_FM
BV_R
I_RM
Description
Forward Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Guaranteed (Min/Max)
1.7V Max.
600V Min.
10µA Max.
Test Conditions
T_J = 25°C, I_F = 12.0A
T_J = 25°C, I_R = 200µA
T_J = 25°C, V_R = 600V
Mechanical Data
Nominal Back Metal Composition, Thickness
Nominal Front Metal Composition, Thickness
Chip Dimensions
Wafer Diameter
Wafer Thickness
Relevant Die Mechanical Dwg. Number
Minimum Street Width
Reject Ink Dot Size
Recommended Storage Environment:
Reference Standard IR packaged part ( for design ) : IRGBC30MD2
Cr-Ni-Ag ( 1kA-4kA-6kA )
99% Al, 1% Si (3 microns)
0.085" x 0.164"
150mm, with std. < 100 > flat
.015" ± .003"
01-5160
100 Microns
0.25mm Diameter Minimum
Store in original container, in dessicated
nitrogen, with no contamination
Die Outline
NOTES :
1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES )
2. CONTROLLING DIMENSION : ( INCH )
3. DIMENSIONAL TOLERANCES :
BONDING PADS : < 0.635 TOLERANCE = ± 0.013
WIDTH
< (.0250) TOLERANCE = ± (.0005)
&
> 0.635 TOLERANCE = ± 0.025
LENGTH
> (.0250) TOLERANCE = ± (.0010)
OVERALLDIE < 1.270 TOLRANCE = ± 0.102
WIDTH
< (.050) TOLERANCE = ± (.004)
&
> 1.270 TOLERANCE = ± 0.203
LENGTH
> (.050) TOLERANCE = ± (.008)