GB75YF120N Datasheet, PDF (1/9 Pages) International Rectifier – IGBT FOUR PAK MODULE

IGBT FOUR PAK MODULE
Features
• Square RBSOA
• HEXFRED low Qrr, low Switching Energy
• Positive V_CE(on) Temperature Coefficient
• Copper Baseplate
• Low Stray Inductance Design
Bulletin I27209 01/06
GB75YF120N
ECONO2 4PAK
V_CES = 1200V
I_C = 75A @ T_C = 67°C
V_CE(on) typ. = 3.4V
Benefits
• Benchmark Efficiency for SMPS appreciation
in particular HF welding
• Rugged Transient Performance
• Low EMI, Requires Less Snubbing
• Direct Mounting to Heatsink space saving
• PCB Solderable Terminals
• Low Junction to Case Thermal Resistance
Absolute Maximum Ratings
Parameter
V_CES
I_C @ Tc=25°C
I_C @ Tc=80°C
I_CM
I_LM
I_F @ Tc=25°C
I_F @ Tc=80°C
I_FM
V_GE
P_D @ Tc=25°C
P_D @ Tc=80°C
T_J
T_STG
V_ISOL
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current (Ref. Fig. C.T.5)
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation (IGBT)
Maximum Power Dissipation (IGBT)
Maximum Operating Junction Temperature
Storage Temperature Range
Isolation Voltage
Thermal and Mechanical Characteristics
R_θJC (IGBT)
R_θJC (Diode)
R_θCS (Module)
Parameter
Junction-to-Case IGBT
Junction-to-Case Diode
Case-to-Sink, flat, greased surface
Mounting Torque (M5)
Weight
Max.
1200
100
67
200
200
40
25
150
±20
480
270
150
-40 to +125
AC 2500 (MIN)
Units
V
A
V
W
°C
V
Min
Typical
Maximum Units
-
-
0.26
°C/W
-
-
1.00
-
0.05
-
2.7
-
3.3
N*m
-
170
-
g
1