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GB50XF120K Datasheet, PDF (1/8 Pages) International Rectifier – IGBT SIXPACK MODULE | |||
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IGBT SIXPACK MODULE
Features
 Low VCE (on) Non Punch Through IGBT Technology
 Low Diode VF
 10µs Short Circuit Capability
 Square RBSOA
 HEXFRED Antiparallel Diode with Ultrasoft
Reverse Recovery Characteristics
 Positive VCE (on) Temperature Coefficient
 Ceramic DBC Substrate
 Low Stray Inductance Design
Benefits
 Benchmark Efficiency for Motor Control
 Rugged Transient Performance
 Low EMI, Requires Less Snubbing
 Direct Mounting to Heatsink
 PCB Solderable Terminals
 Low Junction to Case Thermal Resistance
 UL Approved E78996
ECONO2 6PACK
Absolute Maximum Ratings
Parameter
VCES
IC @ Tc=25°C
IC @ Tc=80°C
ICM
ILM
IF @ Tc=25°C
IF @ Tc=80°C
IFM
VGE
PD @ Tc=25°C
PD @ Tc=80°C
TJ
TSTG
VISOL
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current (Ref. Fig. C.T.5)
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Continuous Forward Current
Pulsed Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation (IGBT and Diode)
Maximum Power Dissipation (IGBT and Diode)
Maximum Operating Junction Temperature
Storage Temperature Range
Isolation Voltage
Bulletin PD - 94567 rev.B 08/03
GB50XF120K
VCES = 1200V
IC = 50A @ TC=80°C
tsc > 10µs @ TJ=150°C
VCE(on) typ. = 2.45V
Max.
1200
75
50
150
150
75
50
150
±20
329
184
150
-40 to +125
AC 2500 (MIN)
Units
V
A
V
W
°C
V
Thermal and Mechanical Characteristics
RθJC (IGBT)
RθJC (Diode)
RθCS (Module)
Parameter
Junction-to-Case IGBT
Junction-to-Case Diode
Case-to-Sink, flat, greased surface
Mounting Torque (M5)
Weight
Min
Typical
Maximum Units
-
-
0.38
°C/W
-
-
0.70
-
0.05
-
2.7
-
3.3
N*m
-
170
-
g
1
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