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GA200TS60UX Datasheet, PDF (1/9 Pages) International Rectifier – Ultra-FastTM Speed IGBT
Bulletin I27221 03/06
"HALF-BRIDGE" IGBT INT-A-PAK
Features
• Generation 4 IGBT technology
• UltraFast:Optimizedforhighoperating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
• Verylowconduction andswitchinglosses
• HEXFREDTMantiparalleldiodeswithultra-soft
recovery
• Industry standard package
• UL approved
GA200TS60UX
Ultra-FastTM Speed IGBT
VCES = 600V
VCE(on) typ. = 1.74V
@ VGE = 15V, IC = 200A
Benefits
• Increasedoperatingefficiency
• Direct mounting to heatsink
• Performanceoptimizedforpowerconversion:
UPS, SMPS, Welding
• Low EMI, requires less snubbing
INT-A-PAK
Absolute Maximum Ratings
Parameters
VCES
IC
ICM
ILM
IFM
VGE
VISOL
PD
Collector-to-Emitter Voltage
Continuos Collector Current
Pulsed Collector Current
@ TC = 25°C
Peak Switching Current
Peak Diode Forward Current
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal to Case, t = 1 min
Maximum Power Dissipation
@ TC = 25°C
@ TC = 85°C
www.irf.com
Max
600
265
400
400
400
± 20
2500
625
325
Units
V
A
V
W
1