GA200TS60U Datasheet, PDF (1/10 Pages) International Rectifier – HALF-BRIDGE IGBT INT-A-PAK Ultra-Fast Speed IGBT

PRELIMINARY
"HALF-BRIDGE" IGBT INT-A-PAK
Features
• Generation 4 IGBT technology
• UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
• Very low conduction and switching losses
• HEXFRED^™ antiparallel diodes with ultra- soft
recovery
• Industry standard package
• UL approved
Benefits
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS,
SMPS, Welding
• Lower EMI, requires less snubbing
PD -5.058B
GA200TS60U
Ultra-Fast^TM Speed IGBT
V_CES = 600V
V_{CE(on) typ.} = 1.8V
@V_GE = 15V, I_C = 200A
Absolute Maximum Ratings
V_CES
I_C @ T_C = 25°C
I_CM
I_LM
I_FM
V_GE
V_ISOL
P_D @ T_C = 25°C
P_D @ T_C = 85°C
T_J
T_STG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Pulsed Collector Current
Peak Switching Current‚
Peak Diode Forward Current
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal To Case, t = 1 min
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Max.
600
200
400
400
400
±20
2500
625
325
-40 to +150
-40 to +125
Units
V
A
V
W
°C
Thermal / Mechanical Characteristics
R_θJC
R_θJC
R_θCS
Parameter
Thermal Resistance, Junction-to-Case - IGBT
Thermal Resistance, Junction-to-Case - Diode
Thermal Resistance, Case-to-Sink - Module
Mounting Torque, Case-to-Heatsink
Mounting Torque, Case-to-Terminal 1, 2 & 3ƒ
Weight of Module
www.irf.com
Typ.
—
—
0.1
—
—
200
Max.
0.20
0.35
—
4.0
3.0
—
Units
°C/W
N^. m
g
1
3/20/98