GA200SA60U Datasheet, PDF (1/8 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR

PD -50066A
INSULATED GATE BIPOLAR TRANSISTOR
GA200SA60U
Ultra-Fast^TM Speed IGBT
Features
• UltraFast: Optimized for minimum saturation voltage
and operating frequencies up to 40 kHz in hard
switching, > 200 kHz in resonant mode
• Very low conduction and switching losses
• Fully isolate package ( 2,500 Volt AC/RMS)
• Very low internal inductance ( ≤ 5 nH typ.)
• Industry standard outline
C
G
E
n-channel
V_CES = 600V
V_{CE(on) typ.} = 1.60V
@V_GE = 15V, I_C = 100A
Benefits
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, Welding, Induction heating
• Lower overall losses available at frequencies ≥ 20kHz
• Easy to assemble and parallel
• Direct mounting to heatsink
• Lower EMI, requires less snubbing
• Plug-in compatible with other SOT-227 packages
Absolute Maximum Ratings
V_CES
I_C @ T_C = 25°C
I_C @ T_C = 100°C
I_CM
I_LM
V_GE
E_ARV
V_ISOL
P_D @ T_C = 25°C
P_D @ T_C = 100°C
T_J
T_STG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load CurrentR
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
RMS Isolation Voltage, Any Terminal to Case, t=1 min
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction
Storage Temperature Range
Mounting Torque, 6-32 or M3 Screw
S O T -2 2 7
Max.
600
200
100
400
400
± 20
160
2500
500
200
-55 to + 150
-55 to + 150
12 lbf •in(1.3N•m)
Units
V
A
V
mJ
V
W
°C
Thermal Resistance
R_θJC
R_θCS
Wt
www.irf.com
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Weight of Module
Typ.
–––
0.05
30
Max.
0.25
–––
–––
Units
°C/W
gm
1
4/24/2000