GA100NA60U Datasheet, PDF (1/10 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR

PD - 94290
INSULATED GATE BIPOLAR TRANSISTOR
GA100NA60U
Ultra-Fast^TM Speed IGBT
Features
• UltraFast^TM: Optimized for minimum saturation
voltage and operating frequencies up to 40 kHz in
2
hard switching, > 200 kHz in resonant mode
• Very low conduction and switching losses
• Fully isolated package (2,500 Volt AC/RMS)
• Very low internal inductance (≤ 5 nH typ.)
• Industry standard outline
Benefits
• Designed for increased operating efficiency in power
conversion: PFC, UPS, SMPS, Welding, Induction heating
• Lower overall losses available at frequencies ≥ 20kHz
• Easy to assemble and parallel
• Direct mounting to heatsink
• Lower EMI, requires less snubbing
• Plug-in compatible with other SOT-227 packages
Absolute Maximum Ratings
V_CES
I_C @ T_C = 25°C
I_C @ T_C = 100°C
I_CM
I_LM
V_GE
V_ISOL
P_D @ T_C = 25°C
P_D @ T_C = 100°C
T_J
T_STG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current‚
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal to Case, t=1 min
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction
Storage Temperature Range
Mounting Torque, 6-32 or M3 Screw
3
V_CES = 600V
1
V_{CE(on) typ.} = 1.49V
@V_GE = 15V, I_C = 50A
4
SOT-227
Max.
600
100
50
200
200
± 20
2500
250
100
-55 to + 150
-55 to + 150
12 lbf •in(1.3N•m)
Units
V
A
V
W
°C
Thermal Resistance
Parameter
R_θJC
R_θJC
R_θCS
Wt
www.irf.com
Junction-to-Case, IGBT
Thermal Resistance, Junction-to-Case , Diode
Case-to-Sink, Flat, Greased Surface
Weight of Module
Typ.
–––
–––
0.05
30
Max.
0.50
1.0
–––
–––
Units
°C/W
gm
1
7/27/01