FC40SA50FK Datasheet, PDF (1/8 Pages) International Rectifier – HEXFET Power MOSFET

I27139- 01/03
FC40SA50FK
Applications
! Switch Mode Power Supply (SMPS)
! Uninterruptible Power Supply
! High Speed Power Switching
! Hard Switched and High Frequency Circuits
V_DSS
500V
HEXFET^® Power MOSFET
R_DS(on) typ.
I_D
0.084 Ω
40A
Benefits
! Low Gate Charge Qg results in Simple
Drive Requirement
! Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
! Fully Characterized Capacitance and
Avalanche Voltage and Current
! Low R_DS(on)
! Fully Insulated Package
SOT-227
Absolute Maximum Ratings
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
V_GS
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current "
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt #
Operating Junction and
Storage Temperature Range
Avalanche Characteristics
Symbol
E_AS
I_AR
E_AR
Parameter
Single Pulse Avalanche Energy$
Avalanche Current"
Repetitive Avalanche Energy"
Thermal Resistance
Symbol
R_θJC
R_θCS
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Max.
40
26
160
430
3.45
± 30
9.0
-55 to + 150
Units
A
W
W/°C
V
V/ns
°C
Typ.
–
–
–
Typ.
–
0.05
Max.
1240
40
43
Units
mJ
A
mJ
Max.
0.29
–
Units
°C/W
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