FB180SA10 Datasheet, PDF (1/8 Pages) International Rectifier – Power MOSFET

l Fully Isolated Package
l Easy to Use and Parallel
l Very Low On-Resistance
l Dynamic dv/dt Rating
l Fully Avalanche Rated
G
l Simple Drive Requirements
l Low Drain to Case Capacitance
l Low Internal Inductance
Description
Fifth Generation, high current density HEXFETS are
paralled into a compact, high power module providing
the best combination of switching, ruggedized design,
very low ON resistance and cost effectiveness.
The isolated SOT-227 package is preferred for all
commercial - industrial applications at power
dissipation levels to approximately 500 watts. The low
thermal resistance and easy connection to the SOT-
227 package contribute to its universal acceptance
throughout the industry.
Absolute Maximum Ratings
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
V_GS
E_AS
I_AR
E_AR
dv/dt
T_J
T_STG
V_ISO
Parameter
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Insulation Withstand Voltage (AC-RMS)
Mounting torque, M4 srew
Thermal Resistance
R_qJC
R_qCS
1
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
PD- 91651C
FB180SA10
HEXFET^® Power MOSFET
D
V_DSS = 100V
R_DS(on) = 0.0065W
I_D = 180A
S
S O T -22 7
Max.
180
120
720
480
2.7
± 20
700
180
48
5.7
-55 to + 150
2.5
1.3
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
kV
N•m
Typ.
–––
0.05
Max.
Units
0.26
–––
°C/W
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