DF Datasheet, PDF (1/5 Pages) –

Bulletin U2788 rev. G 04/03
DF SERIES
1A Single Phase D.I.L. Rectifier Bridge
Features
• Glass passivated chips
• Leads on standard 0.1" grid
• Suitable for automatic insertion
• High surge current capability
~
• Fully characterised data
• Wide temperature range
~
• Surface mount option
• Lead free terminals solderable as per
MIL-STD-750 Method 2026
• High temperature soldering guaranteed 260°C/8-10 secs
• Polarity symbols marked on the case
• UL E160375 approved
+
I_O(av) = 1.0 A
I_O(av)
-
V_RRM range
50 to 1000V
Description
The DF Series of Single Phase Rectifier Bridges
consists of four silicon junctions encapsulated in a 4
pin D.I.L. package. These devices are intended for
general use in industrial and consumer equipment.
Electrical Specification
I_O
Maximum DC output
current
I_FSM
Maximum peak one
cycle, non-repetitive
surge current
I²t
Maximum I²t capability
for fusing
I²âˆšt
V_FM
I_RM
f
V_RRM
Maximum I²âˆšt
capability for fusing
Maximum peak forward
voltage per diode
Typical peak reverse
leakage per diode
Operating frequency
range
Maximum repetitive peak
reverse voltage range
DF...
1.0
0.8
30
31
4.5
4.1
6.4
5.8
64
Units
A
A
A
A
A²s
A²s
A²s
A²s
A²âˆšs
Conditions
T_amb = 40^oC, Resistive or inductive load
T_amb = 40^oC, Capacitive load
t = 10ms, 20ms
Following any rated
t = 8.3ms, 16.7ms load condition and with
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
rated V_RRM reapplied
Initial T_J = T_J max
100% V_RRM reapplied
Initial T_J = T_J max
no voltage reapplied
t = 0.1 to 10ms, no voltage reapplied
1.0
V
I_FM = 1.0A, T_J = 25^oC
5
µA T_J = 25^oC, 100% V_RRM
100
µA T_J = 150^oC, 100% V_RRM
50 to 1000 Hz
50 to 1000 V
Thermal and Mechanical Specifications
DF...
T_J
T_stg
R_thJA
Operating and storage
temperature range
Thermal resistance,
junctions to ambient
- 55 to 150
60
W
Approximate weight
0.6 (0.02)
Units
o_C
K/W
g (oz)
Conditions
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