CPU165MK Datasheet, PDF (1/2 Pages) International Rectifier – IGBT SIP MODULE Short Circuit Rated UltraFast IGBT

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Preliminary Data Sheet PD - 5.036
CPU165MK
IGBT SIP MODULE
Features
• Short Circuit Rated - 10µs @ 125°C, V _GE = 15V
•
Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses
• HEXFRED^TM soft ultrafast diodes
• Optimized for high operating frequency (over 5kHz)
Short Circuit Rated UltraFast IGBT
1,2
4 ^Q1
5
D1
6,7
Product Summary
Output Current in a Typical 20 kHz Motor Drive
10 A_RMS with T_C = 90°C, T_J = 125°C, Supply Voltage 360Vdc,
Power Factor 0.8, Modulation Depth 80%.
Description
The IGBT technology is the key to International Rectifier's advanced line of IMS
(Insulated Metal Substrate) Power Modules. These modules are more efficient
than comparable bipolar transistor modules, while at the same time having the
simpler gate-drive requirements of the familiar power MOSFET. This superior
technology has now been coupled to a state of the art materials system that
maximizes power throughput with low thermal resistance. This package is highly
suited to power applications and where space is at a premium.
9 ^Q2
D2
11,12
These new short circuit rated devices are especially suited for motor control and
other totem-pole applications requiring short circuit withstand capability.
Absolute Maximum Ratings
IMS-1
V_CES
I_C @ T_C = 25°C
I_C @ T_C = 100°C
I_CM
I_LM
I_F @ T_C = 100°C
I_FM
t_sc
V_GE
V_ISOL
P_D @ T_C = 25°C
P_D @ T_C = 100°C
T_J
T_STG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current, each IGBT
Continuous Collector Current, each IGBT
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Isolation Voltage, any terminal to case, 1 min.
Maximum Power Dissipation, each IGBT
Maximum Power Dissipation, each IGBT
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
600
33
17
100
100
15
100
10
± 20
2500
83
33
-40 to +150
300 (0.063 in. (1.6mm) from case)
5-7 lbf•in (0.55 - 0.8 N•m)
Units
V
A
µs
V
V_RMS
W
°C
Thermal Resistance
R_θJC (IGBT)
R_θJC (DIODE)
R_θCS (MODULE)
Wt
Parameter
Junction-to-Case, each IGBT, one IGBT in conduction
Junction-to-Case, each diode, one diode in conduction
Case-to-Sink, flat, greased surface
Weight of module
Typ.
—
—
0.1
20 (0.7)
Max.
1.5
2.0
—
—
Units
°C/W
g (oz)
C-961
Revision 2
To Order