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AUXFS4409 Datasheet, PDF (1/13 Pages) International Rectifier – HEXFET® Power MOSFET | |||
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AUTOMOTIVE GRADE
PD - 97793
Features
â Advanced Process Technology
â Low On-Resistance
â 175°C Operating Temperature
â Fast Switching
G
â Repetitive Avalanche Allowed up to Tjmax
â Lead-Free, RoHS Compliant
â Automotive Qualified *
AUXFS4409
HEXFET® Power MOSFET
D
V(BR)DSS
RDS(on) typ.
max.
S
ID
300V
58mï
75mï
39A
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient
and reliable device for use in Automotive applica-
tions and a wide variety of other applications.
G
Gate
D
DS
G
D2Pak
AUXFS4409
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under âAbsolute Maximum Ratingsâ may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM
Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS
EAS
EAS (tested )
IAR
EAR
Gate-to-Source Voltage
d Single Pulse Avalanche Energy (Thermally Limited)
h Single Pulse Avalanche Energy Tested Value
ÃÂ Avalanche Current
g Repetitive Avalanche Energy
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Thermal Resistance
Parameter
Rï±JC
j Junction-to-Case
Rï±JA
i Junction-to-Ambient (PCB Mount)
Max.
39
28
180
375
2.5
± 20
550
690
See Fig.12a, 12b, 15, 16
-55 to + 175
300
Typ.
âââ
âââ
Max.
0.40
40
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
06/26/12
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