AUIRLZ24NS Datasheet, PDF (1/12 Pages) International Rectifier – Logic Level Gate Drive

AUTOMOTIVE GRADE
AUIRLZ24NS
AUIRLZ24NL
Features
l Advanced Process Technology
l Logic Level Gate Drive
l 175°C Operating Temperature
l Fast Switching
G
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET^®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive avalanche
rating . These features combine to make this design an ex-
tremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
HEXFET^® Power MOSFET
D
V_DSS
55V
R_DS(on) max.
0.06Ω
S ^ID
18A
D
D
GS
D²Pak
AUILZ24NS
S
D
G
TO-262
AUIRLZ24NL
Base Part Number
AUIRLZ24NS
AUIRLZ24NL
Package Type
D2-Pak
TO-262
Standard Pack
Form
Tube
Tape and Reel Left
Quantity
50
800
Tube
50
Orderable Part Number
AUIRLZ24NS
AUIRLZ24NSTRL
AUIRLZ24NL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is
not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal
resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T_A) is
25°C, unless otherwise specified.
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_A = 25°C
P_D @T_C = 25°C
Parameter
g Continuous Drain Current, V_GS @ 10V
g Continuous Drain Current, V_GS @ 10V
cg Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Max.
18
13
72
3.8
45
0.30
Units
A
W
W
W/°C
V_GS
E_AS
I_AR
E_AR
dv/dt
Gate-to-Source Voltage
dg Single Pulse Avalanche Energy
c Avalanche Current
c Repetitive Avalanche Energy
eg Peak Diode Recovery
± 16
V
68
mJ
11
A
4.5
mJ
5.0
V/ns
T_J
Operating Junction and
-55 to + 175
T_STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case)
300
Thermal Resistance
Parameter
R_θJC
Junction-to-Case
R_θJA
Junction-to-Ambient (PCB Mounted, steady-state)**
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
Typ.
–––
–––
Max.
3.3
40
Units
°C/W
1
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February 23, 2015