AUIRLS3034-7P Datasheet, PDF (1/12 Pages) International Rectifier – HEXFETPower MOSFET

AUTOMOTIVE GRADE
PD - 97717A
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free, RoHS Compliant
● Automotive Qualified *
AUIRLS3034-7P
HEXFET^® Power MOSFET
D _VDSS
40V
R_DS(on) typ.
1.0m
max. 1.4m
G
I_{D (Silicon Limited)}
c 380A
S ^ID _{(Package Limited)} ^240A
Description
Specifically designed for Automotive applications, this HEXFET^®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating
temperature, fast switching speed and improved repetitive
avalanche rating . These features combine to make this design
an extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
D
S
SS
S
S
G
D²Pak 7 Pin
AUIRLS3034-7P
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.
Symbol
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_C = 25°C
I_DM
P_D @T_C = 25°C
Parameter
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
d ^{Continuous Drain Current, VGS @ 10V (Wire Bond Limited)}
Pulsed Drain Current
Maximum Power Dissipation
Max.
™ 380
™ 270
240
1540
380
Units
A
W
Linear Derating Factor
2.5
W/°C
V_GS
E_AS
I_AR
E_AR
dv/dt
Gate-to-Source Voltage
e Single Pulse Avalanche Energy (Thermally Limited)
Ãd Avalanche Current
d Repetitive Avalanche Energy
f Peak Diode Recovery
± 20
250
See Fig. 14, 15, 22a, 22b
1.3
V
mJ
A
mJ
V/ns
T_J
T_STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
-55 to + 175
°C
300
(1.6mm from case)
Thermal Resistance
Symbol
R_JC
R_JA
Parameter
kl Junction-to-Case
j Junction-to-Ambient
Typ.
–––
–––
Max.
0.40
40
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
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11/29/11